MicroDiffraction in the Scanning Electron Microscope (SEM)

作者: M.E. Schlienger , R.P. Goehner , J.R. Michael

DOI:

关键词: DiffractionElectron diffractionMicrostructureCharge-coupled deviceCrystalScanning electron microscopeOpticsMaterials scienceAcceleration voltageElectron microscope

摘要: The identification of crystallographic phases in the scanning electron microscope (SEM) has been limited by lack a simple way to obtain diffraction data an unknown while observing microstructure specimen. With development Charge Coupled Device (CCD)-based detectors, backscattered Kikuchi patterns (BEKP), alternately referred as (EBSP), can be easily collected. Previously, BEKP orientation studies due poor pattern quality collected with video rate detector systems. CCD typical now acquired from micron or sub-micron sized crystal using exposure time 1- 10 seconds accelerating voltage 1 O-40 kV and beam current low 0.1 nA. Crystallographic phase analysis is unique that properly equipped SEM permits high magnification images, BEKP’s, elemental information bulk specimens. numerous advantages over other microscopy techniques. large angular view (-70 degrees) provided difficult specimen preparation are distinct technique. No sample beyond what commonly used for specimens required BEKP.

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