Photoconductivity in InGaAs/InP quantum well heterostructures-inter-sub-band and sub-band-continuum transitions
作者： M Zachau , P Helgeson , F Koch , D Grutzmacher , R Meyer
DOI: 10.1088/0268-1242/3/10/012
关键词: Physics 、 Continuum (measurement) 、 Radio frequency 、 Heterojunction 、 Condensed matter physics 、 Amplitude 、 Photoconductivity 、 Quantum well 、 Phase reversal 、 Electron
摘要: The authors consider the photoconductive response of undoped and modulation-doped multi-quantum-well heterostructures InGaAs/InP. Optical transitions between confined sub-band levels, sub-bands extended miniband states, as well fundamental band-gap are identified studied a function temperature T. photoconductivity generally shows phase reversal vanishing amplitude in approximately=100 K range. signal all samples is negative at low This result Coulomb scattering finite equilibrium number electrons well, when photoexcited holes appear well. Contacts shown to greatly influence response. Their by comparing with contact less, radio frequency measurements. By identifying excitations minibands quantum edge energies they determine band offsets. Sub-band calculated compared experimental values.
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