Ga0.47In0.53As/InP superlattices grown by chemical beam epitaxy: Absorption, photoluminescence excitation, and photocurrent spectroscopies

作者: W. T. Tsang , E. F. Schubert , S. N. G. Chu , K. Tai , R. Sauer

DOI: 10.1063/1.98153

关键词:

摘要: Superlattices of Ga0.47In0.53As/InP grown by chemical beam epitaxy (CBE) were studied in detail transmission electron microscopy, absorption, photoluminescence (PL), excitation (PLE), and photocurrent (PC) spectroscopies. Results from all these characterization techniques independently confirmed the superior qualities CBE‐grown superlattices over previously reported results. Photoluminescence linewidths close to those obtained single quantum wells. All observed excitonic absorption peaks PLE, PC spectra well resolved clearly assigned including forbidden E13h transition for first time. In fact, structures still at temperatures as high 102 °C.

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