Very low current threshold GaAs/Al0.5Ga0.5As double‐heterostructure lasers grown by chemical beam epitaxy

作者： W. T. Tsang

DOI: 10.1063/1.96490

关键词: Heterojunction 、 Chemical beam epitaxy 、 Optoelectronics 、 Threshold energy 、 Semiconductor laser theory 、 Active layer 、 Current density 、 Double heterostructure 、 Epitaxy 、 Materials science

摘要: The first device performance of GaAs/Al x Ga1− x As double‐heterostructure lasers grown by chemical beam epitaxy (CBE) is reported. Very low averaged current threshold densities …

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