Chemical beam epitaxy — a child of surface science

摘要: Abstract Chemical Beam Epitaxy (CBE) or MOMBE is currently one of the major deposition techniques in semiconductor technology. The growth process performed a UHV chamber under low pressure conditions and source material supplied by molecular beams, such that only surface kinetics are determining chemical reactions leading to epilayer. This paper intends give review on development this technique. After considering early period, where epitaxy method started develop, partially from ideas being born science, some milestones further basic understanding presented. mutual interaction between CBE/MOMBE as technique other fields science described well impact technology semiconductors (e.g. for Si-based systems). Future prospects CBE finally discussed, particularly comparison with competing MBE MOCVD (metal-organic vapor deposition).