Semiconductor light emitting device and manufacturing method therefor
作者: Yukio Shakuda
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摘要: A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The layers include n-type p-type layer. sandwich the band gap energy is larger than that smaller
RJ Shul, JC Zolper, M Hagerott Crawford, None, Plasma-induced-damage of GaN190. meeting of the Electrochemical Society and technical exhibition, San Antonio, TX (United States), 6-11 Oct 1996. ,(1996) , 10.2172/373894