Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy
作者： W. T. Tsang , A. M. Chang , J. A. Ditzenberger , N. Tabatabaie
DOI: 10.1063/1.97495
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摘要: Shubnikov–de Haas, quantum Hall effect, and cyclotron resonance measurements revealed the existence of a high mobility, two‐dimensional electron gas at Ga0.47In0.53As/InP heterointerface grown by chemical beam epitaxy. Enhanced mobilities were as ∼130×103 cm2/V s 4.2 K. A striking feature in data which also indicates that sample is quality large number Haas oscillation periods observed. Oscillations observable up to Landau filling factor around 50, corresponding level index 25.
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