InGaAs/InP superlattice avalanche photodetectors grown by gas source molecular beam epitaxy
作者： H. Temkin , M. B. Panish , S. N. G. Chu
DOI: 10.1063/1.97517
关键词: Optoelectronics 、 Quantum well 、 Photodetector 、 Avalanche diode 、 Leakage (electronics) 、 Exciton 、 Superlattice 、 Photodiode 、 Molecular beam epitaxy 、 Materials science
摘要: Preparation and performance of separate avalanche multiplication superlattice photodiodes are reported. The absorbing region these devices consists up to 100 InGaAs quantum wells separated by InP barriers grown gas source molecular beam epitaxy. well size varies from 50 20 A with very well‐resolved exciton structures visible at room temperature. With the p‐n junction displaced into layer, leakage currents as low 0.1 nA obtained unity gain bias V. dc 280 rf observed a 38
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