Double heterostructure and multiquantum-well lasers at 1.5–1.7 μm grown by atmospheric pressure MOVPE
作者： A.W. Nelson , R.H. Moss , J.C. Regnault , P.C. Spurdens , S. Wong
DOI: 10.1049/EL:19850233
关键词: Optics 、 Optoelectronics 、 Materials science 、 Atmospheric pressure 、 Double heterostructure 、 Laser 、 Wavelength shift 、 Emission spectrum 、 Metalorganic vapour phase epitaxy 、 Fabrication 、 Gallium arsenide 、 Electrical and Electronic Engineering
摘要: The first successful growth and fabrication of GaInAs/InP MQW CW GaInAsP DH lasers by atmospheric pressure MOVPE is reported. Room-temperature operation was obtained using the ridge-waveguide laser design, threshold currents as low 53 mA were measured. lasers, which also operated at room temperature, fabricated, emission spectra from these devices showed a clear spectral narrowing compared with together wavelength shift, in good agreement theoretical predictions.
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