High‐temperature observation of heavy‐hole and light‐hole excitons in InGaAs/InP multiple quantum well structures grown by metalorganic molecular beam epitaxy
作者： Yoshihiro Kawaguchi , Hajime Asahi
DOI: 10.1063/1.97922
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摘要: Heavy‐hole (hh) and light‐hole (lh) excitons were clearly observed at temperatures as high 450 K in the optical absorption spectrum for 1.5 μm wavelength range InGaAs/InP multiple quantum well (MQW) structures first time. Temperature dependence of hh excitonic half‐width was found to be weaker than that InGaAs/InAlAs MQW structures. The wafers grown on (100) InP substrates by metalorganic molecular beam epitaxy (MOMBE) using trimethylindium, triethylgallium, arsine, phosphine. Intense 77 photoluminescence (PL) emission also from with thickness narrow 10 A. full width half‐maximum PL 60 A 11.7 meV double peak induced monolayer fluctuation thinner wells.
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