Aspects of the Growth of InP/InGaAs Multi-Quantum Well Structures by Gas Source Molecular Beam Epitaxy
作者： G. J. Davies , E. G. Scott , M. H. Lyons , M. A. Z. Rejman-Greene , D. A. Andrews
DOI: 10.1007/978-1-4757-6565-6_3
关键词:
摘要: Gas Source MBE including Chemical Beam Epitaxy is shown to be a promising technique for the growth of heterostructures involving incorporation both arsenic and phosphorus species.
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sci-hub.st 参考文章(13)
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