Effect of barrier configuration on excitonic recombination in Ga0.47In0.53As/Al0.48In0.52As multi quantum well structures
作者： W. Stolz , J. Wagner , K. Ploog
DOI: 10.1016/0022-0248(87)90369-1
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摘要: Photoluminescence and photoluminescence excitation spectroscopy on Ga0.47In0.53As multi quantum wells confined either by homogeneous ternary Al0.48In0.52As barriers or Ga0.47In0.53As/Al0.48In0.52As short-period superlattice (SPS) show that the confinement SPS improves edge luminescence significantly. The spectral width of free-exciton absorption low-temperature emission peak as well Stokes shift between spectra are reduced compared to samples clad barriers. dominant line in SPS-clad is assigned intrinsic excitonic recombination. small can be explained relaxation processes caused monolayer fluctuation statistical composition material.
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