Very high quality single and multiple GaAs quantum wells grown by chemical beam epitaxy
作者： W. T. Tsang , R. C. Miller
DOI: 10.1063/1.97006
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摘要: High quality GaAs/AlxGa1−xAs single and multiquantum well heterostructures were grown for the first time by chemical beam epitaxy. Studies using low‐temperature photoluminescence excitation spectroscopy techniques show that on average these samples are similar in to structures from this laboratory molecular epitaxy (MBE) certain specific characteristics superior MBE ones. Furthermore, some important respects, they also those organometallic vapor deposition (OMCVD). The very small red shifts observed between emission n=1 exciton transition E1h with continuous growth is dominated excitons. An interface roughness of δL≲±a/2, where a lattice constant, square wells (undistorted) even growth, contrast OMCVD inferred spectra. Unusually sharp peaks up E3h including forbidden transitions obtained single...
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