Elimination of oval defects in epilayers by using chemical beam epitaxy

摘要: One ubiquitous problem that continues to haunt over molecular beam epitaxy (MBE) persistently throughout all these year and still without a good controllable solution is the presence of oval defects in gallium‐containing compound semiconductor epilayers. While have not presented major problems for discrete devices, they are likely be serious obstacle integrated circuit applications. We showed were present GaAs In0.53Ga0.47As epilayers grown by conventional MBE process using elemental Ga In as group III sources, either solid As4 or thermally cracked from gas mixtures trimethylarsine hydrogen. On other hand, use chemical which derived thermal pyrolysis their metal alkyls at heated substrate surface resulted reproducibly free entire ∼8 cm diameter (limited holder size). basis results it ...