Seebeck Effect in Silicon

作者: T. H. Geballe , G. W. Hull

DOI: 10.1103/PHYSREV.98.940

关键词: SiliconOptoelectronicsMaterials scienceThermoelectric effectThermoelectric materials

摘要: The Seebeck effect has been measured from liquid hydrogen temperatures into the intrinsic range for a series of single-crystal silicon samples in which varying concentrations of donor …

参考文章(8)
T. H. Geballe, G. W. Hull, Seebeck Effect in Germanium Physical Review. ,vol. 94, pp. 1134- 1140 ,(1954) , 10.1103/PHYSREV.94.1134
H. P. R. Frederikse, Thermoelectric Power of Germanium below Room Temperature Physical Review. ,vol. 92, pp. 248- 252 ,(1953) , 10.1103/PHYSREV.92.248
R. N. Dexter, Benjamin Lax, A. F. Kip, G. Dresselhaus, Effective Masses of Electrons in Silicon Physical Review. ,vol. 96, pp. 222- 223 ,(1954) , 10.1103/PHYSREV.96.222
R. N. Dexter, Benjamin Lax, Effective Masses of Holes in Silicon Physical Review. ,vol. 96, pp. 223- 224 ,(1954) , 10.1103/PHYSREV.96.223
A. E. Middleton, W. W. Scanlon, Measurement of the Thermoelectric Power of Germanium at Temperatures above 78°K Physical Review. ,vol. 92, pp. 219- 226 ,(1953) , 10.1103/PHYSREV.92.219
F. J. Morin, J. P. Maita, Electrical Properties of Silicon Containing Arsenic and Boron Physical Review. ,vol. 96, pp. 28- 35 ,(1954) , 10.1103/PHYSREV.96.28
Conyers Herring, Theory of the Thermoelectric Power of Semiconductors Physical Review. ,vol. 96, pp. 1163- 1187 ,(1954) , 10.1103/PHYSREV.96.1163
C. S. Hung, J. R. Gliessman, Resistivity and Hall Effect of Germanium at Low Temperatures Physical Review. ,vol. 96, pp. 1226- 1236 ,(None) , 10.1103/PHYSREV.96.1226