Transport Phenomena in Heavily Doped Semiconductors
作者： Victor I. Fistul’
DOI: 10.1007/978-1-4684-8821-0_4
关键词: Transport phenomena 、 Magnetic field 、 Condensed matter physics 、 Seebeck coefficient 、 Action (physics) 、 Hall effect 、 Physics 、 Convection–diffusion equation 、 Semiconductor 、 Doping
摘要: Transport Equation. So far we have considered carriers under statistical equilibrium conditions. We shall now deal with the processes taking place action of external forces (electric and magnetic fields, temperature, etc.) — great practical theoretical interest. In these processes, are no longer thus phenomena associated ordered motion known as transport or transfer phenomena.
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