A new device using the tunneling process in narrow p-n junctions

摘要: Abstract The design, fabrication and electrical characteristics of a new device made heavily doped silicon or germanuim for use as an active circuit element, are discussed. is essentially single, narrow p-n junction by alloying techniques, the d.c. negative resistance in its arises from tunneling process across junction, which makes inherently capable working at very high frequency. device, simple construction stable even humidity, promising low-level, high-speed switching, oscillation amplification.