Gamma radiation sensing properties of NiO thick film pn-junctions
作者： O. Korostynska , K. Arshak , M. Mahon
DOI: 10.1109/ICSENS.2003.1278900
关键词:
摘要: The aim of this work is to develop a novel sensor for gamma radiation with instantaneous dosage readout. Thick films based on nickel oxide (NiO), that are the key sensing element in proposed approach, were screen-printed N(111) Si wafers form pn-junctions. Carbon doping was used control conductivity NiO thick films. All devices exposed disc-type /sup 137/Cs source an activity 370 kBq. values damage pn-junctions estimated from changes their current-voltage characteristics. They showed increase current dose up certain levels, exceeding these levels results unstable dosimetric Performance parameters devices, such as sensitivity /spl gamma/-radiation exposure and working region, found be highly dependent composition materials used.
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