Gamma radiation sensing properties of TiO2, ZnO, CuO and CdO thick film pn-junctions
作者： K. Arshak , J. Corcoran , O. Korostynska
DOI: 10.1016/J.SNA.2005.01.014
关键词:
摘要: Abstract The aim of this work is to investigate the feasibility use titanium dioxide (TiO2), zinc oxide (ZnO), copper (CuO) and Cadmium (CdO) in development thick film gamma radiation sensors with instantaneous dosage readouts. A number pn-heterojunctions various compositions sensitive layers were formed by screen printing pastes on silicon wafers. All these devices exposed a disc-type 137Cs source an activity 370 kBq. It was found that for all samples values leakage current increased increasing dose.
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