Effects of annealing atmosphere and temperature on acceptor activation in ZnSe : N grown by photoassisted MOVPE
作者： Ken-ichi Ogata , Daisuke Kawaguchi , Takashi Kera , Shizuo Fujita , Shigeo Fujita
DOI: 10.1016/0022-0248(95)00766-0
关键词: Dehydrogenation 、 Epitaxy 、 Hydrogen 、 Passivation 、 Acceptor 、 Annealing (metallurgy) 、 Analytical chemistry 、 Materials science 、 Inorganic chemistry 、 Atmospheric temperature range 、 Metalorganic vapour phase epitaxy
摘要: Effects of annealing atmosphere and temperature on acceptor activation in nitrogen-doped ZnSe layers grown by photoassisted metalorganic vapor-phase epitaxy (MOVPE) have been investigated. It is shown that as-grown high resistive are converted to p-type thermal N 2 the range from 500 550°C, while they do not if annealed atmospheres H , diethylzinc (DEZn), dimethylselenide (DMSe) which hydrogen contained. The net concentration A -N D has reached up 4 X 10 17 cm -3 at 500°C, but it lower when 550°C. By exposing 350°C, decreases with exposure time. However, almost recovers value obtained first layer again 500°C. These results discussed based passivation model, i.e. dehydrogenation hydrogenation occur reversibly result nitrogen acceptors, respectively.
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