Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

摘要: Abstract p-Type conductive zinc oxide ZnO thin films can be prepared by codoping of Al–N using reactive magnetron sputtering technology. Two kinds dopants, N2O and NH3, were used in the deposition processing together with oxygen. Upon codoping, samples changed into p-type conductions from n-type ones relatively good electrical properties. The best film obtained NH3 as source N shows a hole concentration 1.32×1018 cm−3, mobility 0.05 cm2 V−1 s−1, resistivity about 101 Ω cm. It was found that presence Al facilitated incorporation ZnO.