Comparison of N-doped ZnO and N–Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition
作者： Ebru Senadim Tuzemen , K Kara , DK Takci , RAMAZAN Esen , None
DOI: 10.1007/S12648-014-0569-4
关键词:
摘要: N-doped ZnO and N–Al codoped films are deposited onto glass substrate at room temperature by pulsed filtered cathodic vacuum arc deposition system. The characterized X-ray diffraction, Raman spectra, UV–Vis–NIR spectrophotometer, atomic force microscopy (AFM) Hall measurements. Films textured along the (002) direction. AFM images reveal that surface of film grown RT is smoother than (ZnO:N) film. Optical band gap higher When compared to film, it revealed has a lower hole mobility 18 cm2/V s, concentration 1.205 × 1019 cm−3 thus electrical resistivity 2.730 10−2 ohm cm.
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