作者: A. Sanchez , C. F. Davis , K. C. Liu , A. Javan
DOI: 10.1063/1.324426
关键词: Optoelectronics 、 Photodetector 、 Antenna (radio) 、 Infrared 、 Materials science 、 Far infrared 、 Microwave 、 Detector 、 Diode 、 Quantum tunnelling 、 Optics
摘要: A theoretical analysis of the metal‐oxide‐metal (MOM) antenna/diode as a detector microwave and infrared radiation is presented with experimental verification conducted in far infrared. It shown that detectivity at room temperature can be high 1010 W−1 Hz1/2 frequencies 1014 Hz As result, design guidelines are obtained for lithographic fabrication thin‐film MOM structures to operate 10‐μ region spectrum.