Coupling characteristics of thin‐film metal‐oxide‐metal diodes at 10.6 μ
作者： S. Y. Wang , T. Izawa , T. K. Gustafson
DOI: 10.1063/1.88541
关键词:
摘要: Coherent coupling of 10.6‐μm radiation into high‐resistance photolithographically fabricated metal‐oxide‐metal tunnel junctions has been demonstrated in direct detection experiments.
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