A new versatile, large size MOVPE reactor

摘要: A new reactor for MOVPE of III–V semiconductors is presented. Seven 2 inch wafers or five 3 are in planetary motion a circular growth chamber, with the gas flowing radially from centre to edge. The achieved using technique levitation and rotation substrate holder, which described detail. chamber geometry also detail, numerical mass transport simulations compared experimental results on at atmospheric pressure. Thickness doping GaAs layers uniform within ± 1% wafers. GaAsGa0.5Al0.5As quantum well photoluminescence spectra shown. Very high mobilities obtained GaAs(Ga,Al)As two dimensional electron structures record value 720,000 cm2/→Vs 1.5 K reported.