Variation of Seebeck coefficient in ultrathin si layer by tuning its Fermi energy

摘要: We have varied the Seebeck coefficient of n-type ultrathin Si-on-insulator (SOI) layer by tuning Fermi energy. The energy was tuned doping P atoms into SOI and injecting carriers applying an external bias to surface with respect p-Si substrate. It found that decreases increasing impurity concentration, a peak around 1× 1020 cm-3From calculated density-of-states (DOS), it is considered in likely be due formation band near conduction-band edge, which will demolish sharp features low-dimensional DOS. On other hand, increase agreement variation carrier concentration under can controlled without influences band.