Time-resolved RHEED Studies of the Growth of Epitaxial ZnSe Films on GaAs By Pulsed Laser Deposition

摘要: Film growth consists of two basic processes, deposition and surface relaxation, with opposing effects on the evolution roughness. The pulsed-laser (PLD) process has unique feature having periods very high rates μs time scales followed by periods, order seconds, only relaxation. In this paper we report first efforts towards exploiting to study these processes independently. Thin epitaxial films ZnSe were grown using PLD (001) GaAs 2° miscut substrates. For both singular vicinal surfaces, RHEED patterns taken following showed clear, streaky zone sharp second spots, well-defined Kikuchi lines; features are indicative a smooth quality film. No reconstruction was observed, in contrast behavior observed molecular beam epitaxy. Time-resolved measurements show that single morphology developed during GaAs. However, GaAs, morphologies developed, one transitory appearing evolve steady state. When substrate stopped, recovery signal observed. rate could be attributed relaxation as differentiated their constants. Potential origins observations discussed.