A Si(100)-2×1: H monohydride surface studied by low-energy recoil-ion spectroscopy
作者： Fumiya Shoji , Koichi Kusumura , Kenjiro Oura
DOI: 10.1016/0039-6028(93)90345-K
关键词: Crystallography 、 Silicon 、 Range (particle radiation) 、 Dangling bond 、 Ion beam 、 Hydrogen 、 Spectroscopy 、 Ion 、 Chemistry 、 Molecular physics 、 Molecular geometry
摘要: Abstract The low-energy recoil-ion spectroscopy method has been applied to determine the structure of Si(100)-2 × 1: H monohydride surface. position adsorbed hydrogen atoms with respect nearest-neighbor silicon investigated, along theoretically proposed models. investigation performed using Ne ion beam in energy range from 300 700 eV. Comparing experimental results those calculation, it is shown that optimum H-Si-Si bond angle for which atomic terminates dangling bonds dimers 〈110〉 azimuth 108° 111°.
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