Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.
作者： Nen-Wen Pu , Wei-Sheng Liu , Huai-Ming Cheng , Hung-Chun Hu , Wei-Ting Hsieh
DOI: 10.3390/MA8095316
关键词: Substrate (electronics) 、 Doping 、 Materials science 、 Optoelectronics 、 Thin film 、 Sputtering 、 Indium tin oxide 、 Electron mobility 、 Sputter deposition 、 Transparent conducting film
摘要: … The carrier mobility increase from 6 to 10 cm 2 /Vs that occurred as the substrate temperature was increased from 200 to 400 C was due to the improved crystallite agglomeration and …
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