Semiconductor memory device and semiconductor memory element
作者： Naoto Kobayashi , Kazuhiro Tsumura
DOI:
关键词: Transistor 、 Hot electron 、 Field-effect transistor 、 Communication channel 、 Depletion region 、 Layer (electronics) 、 Semiconductor 、 Optoelectronics 、 Semiconductor memory 、 Materials science
摘要: A semiconductor memory element has MOS transistor for writing by a drain-avalanche hot electron. The substrate, first layer formed on the floating gate provided through intermediation of insulating film, channel region in surface under gate, and source drain so as to be contact with region. distribution at least two kinds carrier densities portions thereof disposed parallel along direction connecting
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