System and method for providing low voltage high density multi-bit storage flash memory
作者： Lee James Jacobson , Andre Paul Labonte , Jiankang Bu
DOI:
关键词: Communication channel 、 Coupling 、 Flash memory 、 Capacitor 、 Memory cell 、 Metal gate 、 Electrical engineering 、 Gate oxide 、 Low voltage 、 Materials science
摘要: A system and method is disclosed for providing a low voltage high density multi-bit storage flash memory. dual bit memory cell of the invention comprises substrate having common source, first drain channel, second channel. control gate located above source. floating are on opposite sides gate. Each formed with sharp tip adjacent to an upper curved surface that follows contour The tips gates efficiently discharge electrons into when erased. surfaces increase capacitor coupling between gates.
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