Method of forming floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells made thereby

摘要: A method of forming an array floating gate memory cells, and formed thereby, wherein each cell includes electrical conductive in a trench semiconductor substrate, control having portion disposed over insulated from the gate. An tunneling is by insulating layer to form tri-layer structure permitting both electron hole charges through at similar rate. Spaced apart source drain regions are with region adjacent lower gate, upper channel therebetween along sidewall trench.