Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes and methods of forming same

摘要: Vertical MOSFETs include a semiconductor substrate having plurality of mesas therein that are separated by deep stripe-shaped trenches. These trenches extend in parallel and lengthwise across the first direction. A buried insulated source electrodes formed gate also provided into shallow defined within electrodes. surface electrode is on substrate. The electrically connected to each at multiple locations along length these connections decrease effective resistance enhance device switching speed.