Junction field-effect transistor with more highly doped connecting region
作者： Heinz Mitlehner , Dietrich Stephani , Jenoe Tihanyi
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摘要: A junction field-effect transistor containing a semiconductor region with an inner is described. In addition, first and second connecting region, respectively, are disposed within the region. The has same conductivity type as but in higher doping concentration. opposite to that of This reduces forward resistance while at time maintaining high reverse voltage strength.
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