Silicon carbide field effect device

摘要: A silicon carbide field effect device includes vertically stacked regions of first conductivity type, extending from a lowermost drain region to an uppermost source region. In between the and regions, drift channel are provided. The extends adjacent Control majority carrier conduction is provided by plurality trenches, which extend through region, conductive gate electrodes therein. To provide high blocking voltage capability low on-state resistance, doping concentration in selected be greater than but below regions. Preferably, material used for electrodes, spacing trenches chosen so that depleted charge carriers when zero potential bias applied electrodes.