Method and system for metal gate formation with wider metal gate fill margin
作者： Peng-Soon Lim , Kuang-Yuan Hsu , Meng-Hsuan Chan
DOI:
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摘要: A method includes providing a semiconductor substrate having gate trench and depositing metal layer, using physical vapor deposition (PVD) process, over the to partially fill trench. The layer bottom portion sidewall that is thinner than portion. also forming coating on etching back such of protects within trench, removing unprotected layer. different aspect involves device top surface, formed wherein portion,
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