Semiconductor Device and Method for Forming the Same
作者： Shin-Jae Kang , Tai-Soo Lim , Hyunseok Lim , Kyung-tae Jang
DOI:
关键词:
摘要: Methods of forming a semiconductor device include an insulation layer on structure, opening in the layer, having sidewall defined by one side first metal opening, at least partially exposing performing wet-etching process and selectively second etched layer. An average grain size is smaller than Related devices are also disclosed.
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