High Temperature Operated Enhancement-Type β -SiC MOSFET

摘要: Enhancement-type β-SiC MOSFETs have been fabricated on a single crystalline layer grown 3-inch Si(100) substrate by chemical vapor deposition. The applying the reactive ion etching technique show reasonable I-V characteristics at room temperature. saturation tendency of drain currents has observed voltage as high 18 V. operate even 350°C.