Semiconductor device including vertical MOSFET structure with suppressed parasitic diode operation
作者： Takeshi Miyajima , Norihito Tokura , Kunihiko Hara
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摘要: A vertical MOSFET, which can control AC current flowing through a device only by the gate voltage, is obtained. On an n + silicon layer formed - layer. Within p-body region. region source top of substrate are electrode in contact with and base The connected to each other resistance at outside. channel oxide film (insulating film). When above semiconductor reverse bias conduction, exciting controlled voltage setting from terminal electrode, be negligibly small as compared region,
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