Semiconductor device having an interposing layer between an electrode and a connection electrode

摘要: In a semiconductor device, such as an IGBT and DMOS FET, parasitic transistor is created between first region (drift region) third electrode (emitter of the same conductivity type on one hand surface portion second (base opposite to that first-mentioned other hand. An interposing layer formed of, for example, poly-Si in manner partially cover emitter base region. A metal film connection whole resultant structure it ohmic contact with The conductive interposed not direct electrically so connected have some extent resistance.