Vertical type insulated gate bipolar transistor having a planar gate structure
作者： Hideki Nakamura , Tadaharu Minato
DOI:
关键词: p–n junction 、 Electrical engineering 、 Common emitter 、 Planar 、 Base (geometry) 、 Power supply unit 、 Direct current 、 Insulated-gate bipolar transistor 、 Optoelectronics 、 Layer (electronics) 、 Materials science
摘要: A first metal electrode layer is formed to be electrically connected with a p base region in an n drift region. second which emitter provided the formed. direct current power supply unit and layers. The functions as means for applying forward bias pn junction between
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