Method for manufacturing silicon carbide semiconductor device
作者： Hideki Hayashi , Takeyoshi Masuda
DOI:
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摘要: A silicon carbide substrate including a first layer having conductivity type, second and third the type is formed. trench provided with an inner surface side wall bottom formed, extending through reaching layer, being formed of layer. film to cover surface. gate oxide on by oxidation in trench. The includes portion substrate, Accordingly, method for manufacturing semiconductor device high breakdown voltage provided.
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