Monte Carlo study of ion-induced secondary electron emission from SiO2

摘要: Abstract Here we describe a recently developed direct Monte Carlo program to study kinetic electron emission from SiO 2 target. The includes excitation of the target electrons (by projectile ions, recoiling atoms and fast primary electrons), subsequent transport escape these surface. can be used calculate yields, distribution points in other physical parameters emitted electrons. In order demonstrate capabilities this program, report on induced by (1–10 keV) rare gas ions. calculated yield for various ion energies masses is good agreement with predictions most frequently applied theoretical model. addition, effects energy, mass impact angle depth average outgoing were investigated. It important mention that existing experimental techniques are not capable measure parameters.