Target material dependence of secondary electron images induced by focused ion beams

摘要: Monte Carlo calculation of ion-induced kinetic secondary electron emission was performed to study the target material dependence images in scanning ion microscopy (SIM) by using focused beams, which is different from that (SEM). In calculation, excitation projectile ions treated partial wave scattering cross-section conduction electrons ions, and cascade multiplication process excited simulated as well elastic collision recoiling atoms. The calculated yields Al (Z s13) ,C u(Z s29) Au s79) for 30 10 keV Ga impacts decrease with increasing atomic number, Z , q 22 2 materials, whereas those 1 H increase . This consistent observed opposite trend between SIM SEM images. Simultaneous individual inelastic collisions ion, atoms suggests yield heavy-ion impact related large energy loss low solid. 2002 Elsevier Science B.V. All rights reserved.