Contrast mechanisms in scanning ion microscope imaging for metals

作者: Y. Sakai , T. Yamada , T. Suzuki , T. Sato , H. Itoh

DOI: 10.1063/1.121872

关键词: Ion beamElectron beam-induced depositionSecondary emissionChemistryField ion microscopeEnvironmental scanning electron microscopeScanning electron microscopeSecondary electronsAnalytical chemistryIon beam deposition

摘要: The contrast of the secondary electron images in scanning ion microscopy (SIM) is compared with that (SEM) ultrahigh vacuum for Al, Cu, Ag, and Au metals deposited on Si(100) clean surface. order yields as a function atomic number (Z2) bombardment opposite to bombardment. brightness observed by focused Ga+ beam at 30 keV decreases increasing Z2, while increases Z2. On other hand, total SIM image Ar+-ion 3 shows similar Ga+-ion beam. different Z2 dependence between SEM was quantitatively confirmed spectra discussed based range profile below surface, it concluded decrea...

参考文章(5)
J C Kelly, N E W Hartley, P D Townsend, Ion implantation, sputtering and their applications ,(1976)
R. A. Baragiola, E. V. Alonso, A. Oliva Florio, Electron emission from clean metal surfaces induced by low-energy light ions Physical Review B. ,vol. 19, pp. 121- 129 ,(1979) , 10.1103/PHYSREVB.19.121
S. Y. Lai, A. Brown, J. C. Vickerman, D. Briggs, The relationship between electron and ion induced secondary electron imaging: a review with new experimental observations Surface and Interface Analysis. ,vol. 8, pp. 93- 111 ,(1986) , 10.1002/SIA.740080302
D. Rosenberg, G. K. Wehner, Sputtering Yields for Low Energy He+‐, Kr+‐, and Xe+‐Ion Bombardment Journal of Applied Physics. ,vol. 33, pp. 1842- 1845 ,(1962) , 10.1063/1.1728843