作者: Y. Sakai , T. Yamada , T. Suzuki , T. Sato , H. Itoh
DOI: 10.1063/1.121872
关键词: Ion beam 、 Electron beam-induced deposition 、 Secondary emission 、 Chemistry 、 Field ion microscope 、 Environmental scanning electron microscope 、 Scanning electron microscope 、 Secondary electrons 、 Analytical chemistry 、 Ion beam deposition
摘要: The contrast of the secondary electron images in scanning ion microscopy (SIM) is compared with that (SEM) ultrahigh vacuum for Al, Cu, Ag, and Au metals deposited on Si(100) clean surface. order yields as a function atomic number (Z2) bombardment opposite to bombardment. brightness observed by focused Ga+ beam at 30 keV decreases increasing Z2, while increases Z2. On other hand, total SIM image Ar+-ion 3 shows similar Ga+-ion beam. different Z2 dependence between SEM was quantitatively confirmed spectra discussed based range profile below surface, it concluded decrea...