Epitaxial growth of CaO films on MgO(001) surface: Strain relaxation at the CaO∕MgO heterointerface
作者： HD Li , XN Zhang , Z Zhang , ZX Mei , XL Du
DOI: 10.1063/1.2770826
关键词: Molecular beam epitaxy 、 Materials science 、 Epitaxy 、 Strain (chemistry) 、 Surface strain 、 Crystal growth 、 Relaxation (NMR) 、 Thin film 、 Composite material 、 Mineralogy 、 Transmission electron microscopy 、 General Physics and Astronomy
摘要: The epitaxial growth of CaO films on mechanical-damage-free MgO(001) surface using low-temperature buffer technique has been carefully investigated. strain is effectively relaxed in the CaO/MgO interfacial layers by lattice distortion and misfit dislocations as confirmed transmission electron microscopy, which facilitates subsequent smooth film at high temperature. relaxation mechanism heterointerface discussed detail.
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