InP epitaxial thin‐film formation by planar reactive deposition

作者: L. M. Fraas , K. Zanio , M. Shibata

DOI: 10.1063/1.88802

关键词: OptoelectronicsFabricationPlanarMaterials scienceElectron diffractionChemical vapor depositionDeposition (phase transition)Inorganic chemistryPhosphorSubstrate (electronics)EpitaxyPhysics and Astronomy (miscellaneous)

摘要: Complete InP epitaxy on GaAs and twinned CdS were achieved below 390 °C by planar reactive deposition (PRD). In this technique, indium metal is evaporated from a source with an integral cavity into which PH3 gas introduced decomposed. The decomposition reaction products, P2 H2, are emitted within the through perforated top plate combined In, P2, H2 vapor stream arrival at substrate forms films. High‐energy electron diffraction SEM measurements show crystallographic quality of resultant films to be limited quality.

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