作者: L. M. Fraas , K. Zanio , M. Shibata
DOI: 10.1063/1.88802
关键词: Optoelectronics 、 Fabrication 、 Planar 、 Materials science 、 Electron diffraction 、 Chemical vapor deposition 、 Deposition (phase transition) 、 Inorganic chemistry 、 Phosphor 、 Substrate (electronics) 、 Epitaxy 、 Physics and Astronomy (miscellaneous)
摘要: Complete InP epitaxy on GaAs and twinned CdS were achieved below 390 °C by planar reactive deposition (PRD). In this technique, indium metal is evaporated from a source with an integral cavity into which PH3 gas introduced decomposed. The decomposition reaction products, P2 H2, are emitted within the through perforated top plate combined In, P2, H2 vapor stream arrival at substrate forms films. High‐energy electron diffraction SEM measurements show crystallographic quality of resultant films to be limited quality.