摘要: Thin films of InP were deposited on single crystals and thin CdS by the planar reactive deposition technique. Good local epitaxy was observed as well GaAs. The electrical evaluation unintentionally doped semi-insulating substrates show them to be n-type with room temperature electron concentrations ranging from 5 × 1016 cm−3 1017 mobilities up 1350 cm2/Vsec. For intentionally Mn Be, p-type obtained. doping (deep acceptor level), high 140 cm2/Vsec free carrier low (with dopant level 3 1018 cm−3) Bedoped films, about 20 found. Scanning microscope microprobe pictures appreciable interdiffusion between InP/CdS thin-film pair for at 450°C. loss Cd presence an indium-cadmium-sulfur phase interface observed. Interdiffusion is alleviated lower temperatures.
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