Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5–1.65 μm: Broadening of the fundamental transition
作者： R. Kudrawiec , P. Poloczek , J. Misiewicz , H. P. Bae , T. Sarmiento
DOI: 10.1063/1.3073718
关键词: Semiconductor laser theory 、 Laser 、 Quantum well 、 Annealing (metallurgy) 、 Semiconductor quantum wells 、 Gallium arsenide 、 Condensed matter physics 、 Materials science 、 Wide-bandgap semiconductor 、 Optoelectronics
摘要: Contactless electroreflectance (CER) has been applied to study the broadening of fundamental transition for GaInNAsSb/GaNAs/GaAs quantum wells (QWs) obtained at various growth and annealing conditions. It observed that CER resonances are about 50% narrower QWs grown lower group V fluxes annealed temperatures (660–720 °C) longer time (30–60 min) than those previously considered optimal (∼760 °C ∼60 s). The long can be partially realized in situ during (and/or after) upper part laser structure instead ex short-time annealing, where unintentionally overannealed very easily.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(21)
R. Kudrawiec, S. R. Bank, H. B. Yuen, H. Bae, M. A. Wistey, L. L. Goddard, James S. Harris, M. Gladysiewicz, M. Motyka, J. Misiewicz, Conduction band offset for Ga0.62In0.38NxAs0.991−xSb0.009∕GaNyAs1−y∕GaAs systems with the ground state transition at 1.5–1.65μm Applied Physics Letters. ,vol. 90, pp. 131905- ,(2007) , 10.1063/1.2716366
Seth R. Bank, Hopil Bae, Lynford L. Goddard, Homan B. Yuen, Mark A. Wistey, Robert Kudrawiec, James S. Harris, Recent Progress on 1.55- $\mu{\hbox {m}}$ Dilute-Nitride Lasers IEEE Journal of Quantum Electronics. ,vol. 43, pp. 773- 785 ,(2007) , 10.1109/JQE.2007.902301
Masahiko Kondow, Takeshi Kitatani, Sho Shirakata, Annealing in GaInNAs system Journal of Physics: Condensed Matter. ,vol. 16, pp. 3229- 3244 ,(2004) , 10.1088/0953-8984/16/31/017
Minghua Wang, Deren Yang, Dongsheng Li, Zhizhong Yuan, Duanlin Que, Correlation between luminescence and structural evolution of Si-rich silicon oxide film annealed at different temperatures Journal of Applied Physics. ,vol. 101, pp. 103504- ,(2007) , 10.1063/1.2732544
Gregor Mussler, Lutz Däweritz, Klaus H. Ploog, Jens W. Tomm, Vadim Talalaev, Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N) Applied Physics Letters. ,vol. 83, pp. 1343- 1345 ,(2003) , 10.1063/1.1602576
R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, James S. Harris, Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb∕GaAsN∕GaAs quantum well tailored at 1.5μm: The energy level structure and the Stokes shift Journal of Applied Physics. ,vol. 97, pp. 053515- ,(2005) , 10.1063/1.1854729
D.E. Aspnes, Third-derivative modulation spectroscopy with low-field electroreflectance Surface Science. ,vol. 37, pp. 418- 442 ,(1973) , 10.1016/0039-6028(73)90337-3
Seth R. Bank, Homan B. Yuen, Hopil Bae, Mark A. Wistey, James S. Harris, Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications Applied Physics Letters. ,vol. 88, pp. 221115- ,(2006) , 10.1063/1.2208375
M. Motyka, G. Sęk, R. Kudrawiec, P. Sitarek, J. Misiewicz, J. Wojcik, B. J. Robinson, D. A. Thompson, P. Mascher, Probing the indium clustering in InGaAs∕GaAs quantum wells by room temperature contactless electroreflectance and photoluminescence spectroscopy Journal of Applied Physics. ,vol. 101, pp. 116107- ,(2007) , 10.1063/1.2745400
R. Kudrawiec, G. Se̢k, J. Misiewicz, D. Gollub, A. Forchel, Explanation of annealing-induced blueshift of the optical transitions in GaInAsN/GaAs quantum wells Applied Physics Letters. ,vol. 83, pp. 2772- 2774 ,(2003) , 10.1063/1.1615673