Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N)
作者： Gregor Mussler , Lutz Däweritz , Klaus H. Ploog , Jens W. Tomm , Vadim Talalaev
DOI: 10.1063/1.1602576
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摘要: Rapid thermal annealing parameters for Ga(As,N) with 0.5% N are experimentally analyzed. The criteria taken into account the relative intensity of observed deep level photoluminescence, edge luminescence contributions, and decay time. For a 60 s treatment, we find an optimum temperature 850 °C clear tendency lower temperatures increasing contents. Luminescence times up to 400 ps recombination delocalized carrier pairs match well lifetime region specific direct III–V semiconductors provide evidence type-I band alignment in samples investigated.
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